宽禁带器件 IGBT混合开关逆变器研究

论文总字数：21781字

摘 要

为提高电力电子装置性能，需要提高变换效率和功率密度，而提高功率密度的重要途径是提高工作频率，这意味着将增大开关损耗，降低装置效率，当器件开关的功率损耗固定时，提高效率和提高功率密度是无法同时实现的。因此，为在维持装置较高变换效率的情况下提高工作频率，就必须降低开关器件的开关损耗。在当前电力电子器件技术发展条件下，提出了将开关性能更好的小功率宽禁带器件和大功率Si器件并联组成混合开关的思路，将两者的优点结合，通过宽禁带器件短时过载实现Si器件的零电压开关，从而达到降低器件开关损耗的目的。本文首先了解和总结了开关器件的开通关断过程以及开关损耗的计算方法，随后以具体型号的IGBT和SiC器件为例，对两者及他们组成的混合开关的开关损耗进行了理论计算、仿真和实验测试。将得到的实验测试数据进行分析和处理，计算出实际中的开关损耗,与理论计算值和仿真结果进行比对，相互印证，最终得到了预想中的结论，即混合开关器件的的使用，的确能够在不大幅增加成本的前提下，达到降低器件开关损耗的目的，将此结构代替Si IGBT用于大功率电力电子装置中，可以降低装置的损耗，提高工作频率，优化装置的性能，与其他的降低开关损耗的方式，例如谐振软开关，相比，此方法控制方法更加简单，电路结构不复杂，稳定性高。

关键词：功率密度,开关损耗,宽禁带器件,混合开关

Abstract

In order to improve the performance of power electronic devices, it is necessary to improve the conversion efficiency and power density, and the important way to improve the power density is to increase the working frequency, which means that the switching loss will be increased and the efficiency of the device will be reduced. When the power loss of the device switch is fixed, it is impossible to improve the efficiency and power density at the same time. Therefore, in order to improve the working frequency while maintaining the high conversion efficiency of the device, it is necessary to reduce the switching loss of the switching device. Under the condition of current development of power electronic device technology, the idea of combining low power wide bandgap device and high power Si device with better switching performance to form hybrid switch in parallel is put forward. The zero voltage switch of Si device is realized by short time overload of wide bandgap device, so as to reduce the switching loss of the device. In this paper, the switching process of switching devices is first understood. Then, taking the specific types of IGBT and SiC devices as examples, the switching losses of the two devices and their hybrid switches are calculated theoretically. Simulation and physical testing. The physical test data are analyzed and processed, the switching loss in practice is calculated, compared with the theoretical calculation value and the simulation results, and the mutual verification is carried out. Finally, the expected conclusion is obtained, that is, with the use of hybrid switching devices, it is true that the switching loss of the device can be reduced without greatly increasing the cost. Using this structure instead of Si IGBT in the high power electronic device can reduce the loss of the device, improve the working frequency and optimize the performance of the device. Compared with other ways to reduce switching loss, such as resonant soft switch, this method has the advantages of simpler control method, less complex circuit structure and higher stability.

KEY WORDS: Power density, switching loss, wide bandgap semiconductor, hybrid switch

目 录

摘要 I

Abstract II

第一章 绪论 1

1.1电力电子技术、电力电子器件技术概述 1

1.1.1电力电子技术发展进程 1

1.1.2电力电子装置发展的目标和挑战 2

1.2电力电子装置的优化和改进 3

1.2.1优化电力电子装置性能的措施 3

1.2.2国内外目前研究现状 3

1.3论文研究目的与意义 5

1.4论文的主要内容与结构 5

第二章 电力电子变换器损耗成分分析 7

2.1导通特性 7

2.2开通损耗及反向恢复损耗 9

2.2.1开关过程分析 9

2.2.2开通损耗 11

2.2.3关断损耗 12

2.2.4反向恢复损耗 13

第三章 各类电力电子器件的分析和比较及混合开关概述 15

3.1电力电子器件比较 15

3.2混合开关概述 16

3.2.1混合开关结构和工作原理 16

3.2.2混合开关控制方式分析比较 16

3.2.3混合开关损耗的理论计算 17

第四章 仿真验证 19

4.1双脉冲（DPT）电路介绍 19

4.2实用软件（PSpice）简介 19

4.3仿真模型搭建 19

4.4仿真结果及分析 20

第五章 实验验证 23

5.1电路整体拓扑 23

5.2电路各模块详细介绍 23

5.2.1控制器 23

5.2.2主电路 23

5.2.3驱动模块 24

5.2.4辅助电源模块 24

5.2.5差分发送、接收模块 24

5.3实验过程 25

5.4数据处理 26

第六章 总结及展望 29

6.1总结及不足 29

6.2展望 29

参考文献 30

致 谢 31

第一章 绪论

1.1电力电子技术、电力电子器件技术概述

1.1.1电力电子技术发展进程

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